IGBT Transistors - Kaimeite

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3 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXXX160N65B4	GET PRICE	PDF RFQ	45 In-stock	IXYS	IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT	Through Hole	PLUS 247-3	+ 175 C	Tube	940 W	Single	650 V	1.54 V	310 A	200 nA	20 V
IXXK160N65B4	GET PRICE	PDF RFQ	34 In-stock	IXYS	IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT	Through Hole	TO-264-3	+ 175 C	Tube	940 W	Single	650 V	1.54 V	310 A	200 nA	20 V
IXGH42N30C3	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 42 Amps 300V	Through Hole	TO-247-3	+ 150 C	Tube	223 W	Single	300 V	1.54 V		100 nA	+/- 20 V

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