IGBT Transistors - Kaimeite

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9 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IXBX25N250		GET PRICE	PDF RFQ	36 In-stock	IXYS	IGBT Transistors	Through Hole	TO-247-3	+ 150 C		300 W	Single	2.5 kV	3.3 V	55 A	+/- 100 nA	+/- 20 V
	APT25GP120BDQ1G		GET PRICE	PDF RFQ	72 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C		417 W	Single	1.2 kV	3.3 V	69 A	100 nA	30 V
	APT45GP120BG		GET PRICE	PDF RFQ	22 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C	Tube	625 W	Single	1.2 kV	3.3 V	100 A	100 nA	30 V
	APT45GP120B2DQ2G		GET PRICE	PDF RFQ	24 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	T-MAX-3	+ 150 C	Tube	625 W	Single	1.2 kV	3.3 V	113 A	100 nA	30 V
	APT75GP120B2G		GET PRICE	PDF RFQ	100 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	T-MAX-3	+ 150 C		1.042 kW	Single	1.2 kV	3.3 V	100 A	100 nA	30 V
	APT45GP120J		GET PRICE	PDF RFQ	13 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Screw	SOT-227-4	+ 150 C		329 W	N-Channel	1.2 kV	3.3 V	34 A	100 nA	+/- 20 V
	IXGT35N120B		GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 70 Amps 1200V 3.3 Rds	SMD/SMT	TO-268-3	+ 150 C	Tube		Single	1200 V	3.3 V			+/- 20 V
	IXGX35N120B		GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 70 Amps 1200V 3.3 V Rds	Through Hole	PLUS 247-3	+ 150 C	Tube		Single	1200 V	3.3 V			20 V
	IXGK35N120B		GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 70 Amps 1200V 3.3 V Rds	Through Hole	TO-264-3	+ 150 C	Tube		Single	1200 V	3.3 V			20 V

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