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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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176
In-stock
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IXYS | IGBT Transistors 8 Amps 1700V 5.2 Rds | Through Hole | ISOPLUS247-3 | + 150 C | Tube | 120 W | Single | 1.7 kV | 4.2 V | 16 A | 100 nA | +/- 20 V | |||
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180
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1200 V | 4.2 V | 90 A | 100 nA | 30 V | |||
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12
In-stock
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IXYS | IGBT Transistors 17 Amps 1700V 5.2 Rds | Through Hole | ISOPLUS247-3 | + 150 C | Tube | 200 W | Single | 1.7 kV | 4.2 V | 26 A | 100 nA | +/- 20 V | |||
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7
In-stock
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IXYS | IGBT Transistors 32 Amps 1700 V 5 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 190 W | Single | 1.7 kV | 4.2 V | 16 A | 100 nA | +/- 20 V | |||
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4,627
In-stock
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onsemi | IGBT Transistors HIGH POWER SWITCHING | SMD/SMT | ECH-8 | + 150 C | Reel | Single Quad Collector Triple Emitter | 400 V | 4.2 V | 150 A | 10 uA | +/- 4 V | ||||
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30
In-stock
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IXYS | IGBT Transistors 32 Amps 1700 V 5 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1.7 kV | 4.2 V | 16 A | 100 nA | +/- 20 V |