Build a global manufacturer and supplier trusted trading platform.
Manufacture :
Packaging :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXGR16N170AH1
GET PRICE
RFQ
176
In-stock
IXYS IGBT Transistors 8 Amps 1700V 5.2 Rds Through Hole ISOPLUS247-3 + 150 C Tube 120 W Single 1.7 kV 4.2 V 16 A 100 nA +/- 20 V
IXYH50N120C3D1
GET PRICE
RFQ
180
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT Through Hole TO-247-3 + 150 C Tube 625 W Single 1200 V 4.2 V 90 A 100 nA 30 V
IXGR32N170AH1
GET PRICE
RFQ
12
In-stock
IXYS IGBT Transistors 17 Amps 1700V 5.2 Rds Through Hole ISOPLUS247-3 + 150 C Tube 200 W Single 1.7 kV 4.2 V 26 A 100 nA +/- 20 V
IXGT16N170A
GET PRICE
RFQ
7
In-stock
IXYS IGBT Transistors 32 Amps 1700 V 5 V Rds SMD/SMT TO-268-3 + 150 C Tube 190 W Single 1.7 kV 4.2 V 16 A 100 nA +/- 20 V
TIG065E8-TL-H
GET PRICE
RFQ
4,627
In-stock
onsemi IGBT Transistors HIGH POWER SWITCHING SMD/SMT ECH-8 + 150 C Reel   Single Quad Collector Triple Emitter 400 V 4.2 V 150 A 10 uA +/- 4 V
IXGH16N170A
GET PRICE
RFQ
30
In-stock
IXYS IGBT Transistors 32 Amps 1700 V 5 V Rds Through Hole TO-247-3 + 150 C Tube 190 W Single 1.7 kV 4.2 V 16 A 100 nA +/- 20 V
Page 1 / 1