IGBT Transistors - Kaimeite

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9 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IXGH32N170A		GET PRICE	PDF RFQ	99 In-stock	IXYS	IGBT Transistors VRY HI VOLT NPT IGBT 1700V, 72A	Through Hole	TO-247-3	+ 150 C	Tube	350 W	Single	1.7 kV	4 V	32 A	100 nA	+/- 20 V
	IXYH20N120C3D1		GET PRICE	PDF RFQ	30 In-stock	IXYS	IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT	Through Hole	TO-247-3	+ 150 C	Tube	230 W	Single	1200 V	4 V	36 A	100 nA	30 V
	IXYP20N120C3		GET PRICE	PDF RFQ	80 In-stock	IXYS	IGBT Transistors GenX3 1200V XPT IGBT	Through Hole	TO-220-3	+ 175 C	Tube	278 W	Single	1200 V	4 V	40 A	100 nA	30 V
	IXYJ20N120C3D1		GET PRICE	PDF RFQ	28 In-stock	IXYS	IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT	Through Hole	TO-247-3	+ 150 C	Tube	105 W	Single	1200 V	4 V	21 A	100 nA	30 V
	IXGT32N170A		GET PRICE	PDF RFQ	30 In-stock	IXYS	IGBT Transistors 72 Amps 1700 V 5.0 V Rds	SMD/SMT	TO-268-3	+ 150 C	Tube		Single	1700 V	4 V			20 V
	IXGT6N170		GET PRICE	PDF RFQ	31 In-stock	IXYS	IGBT Transistors 12 Amps 1700 V 4 V Rds	SMD/SMT	TO-268-3	+ 150 C	Tube		Single	1700 V	4 V			20 V
	IXGH20N140C3H1		GET PRICE	PDF RFQ	9 In-stock	IXYS	IGBT Transistors GenX3 1400V IGBTs w/ Diode	Through Hole	TO-247-3	+ 150 C	Tube	250 W	Single	1400 V	4 V	42 A	100 nA	+/- 20 V
	IXGX32N170AH1		GET PRICE	PDF RFQ	13 In-stock	IXYS	IGBT Transistors 24 Amps 1700V 5 Rds	Through Hole	PLUS 247-3	+ 150 C	Tube	350 W	Single	1.7 kV	4 V	32 A	100 nA	+/- 20 V
	IXYH20N120C3		GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors GenX3 1200V XPT IGBT	Through Hole	TO-247-3	+ 175 C	Tube	278 W	Single	1200 V	4 V	40 A	100 nA	30 V

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