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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4PH40KDPBF
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3,848
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Infineon Technologies IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT Through Hole TO-247-3 + 150 C Tube 160 W Single 1.2 kV 3.4 V 30 A   +/- 20 V
IXYX25N250CV1HV
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18
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IXYS IGBT Transistors 2500V/95A , HV XPT IGBT Copacked Through Hole TO-247PLUS-HV-3 + 175 C Tube 937 W Single 2.5 kV 3.4 V 95 A +/- 100 nA +/- 20 V
IXBT10N170
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35
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IXYS IGBT Transistors 10 Amps 1700V 2.3 Rds SMD/SMT TO-268-3 + 150 C Tube 140 W Single 1.7 kV 3.4 V 20 A 100 nA +/- 20 V
IRG4PH40KPBF
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Infineon Technologies IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB... Through Hole TO-247-3 + 150 C Tube 160 W Single 1.2 kV 3.4 V 30 A   +/- 20 V
IXST15N120B
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IXYS IGBT Transistors 30 Amps 1200V 3.4 Rds SMD/SMT TO-268-3 + 150 C Tube   Single 1200 V 3.4 V     +/- 20 V
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