- Manufacture :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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962
In-stock
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Infineon Technologies | IGBT Transistors 650V IGBT Trenchstop 5 | Through Hole | TO-247-3 | + 175 C | Tube | 227 W | Single | 650 V | 1.05 V | 85 A | 100 nA | 20 V | |||
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424
In-stock
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Infineon Technologies | IGBT Transistors 650V IGBT Trenchstop 5 | Through Hole | TO-247-3 | + 175 C | Tube | 227 W | Single | 650 V | 1.05 V | 85 A | 100 nA | 20 V | |||
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222
In-stock
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Infineon Technologies | IGBT Transistors 650V IGBT Trenchstop 5 | Through Hole | TO-247-3 | + 175 C | Tube | 227 W | Single | 650 V | 1.05 V | 85 A | 100 nA | 20 V | |||
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422
In-stock
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ROHM Semiconductor | IGBT Transistors 650V 50A IGBT Stop Trench | Through Hole | TO-247-3 | + 175 C | Tube | 277 W | 650 V | 1.6 V | 85 A | +/- 200 nA | +/- 30 V | ||||
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428
In-stock
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ROHM Semiconductor | IGBT Transistors 650V 50A IGBT Stop Trench | Through Hole | TO-247-3 | + 175 C | Tube | 277 W | 650 V | 1.6 V | 85 A | +/- 200 nA | +/- 30 V |
