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Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXXX110N65B4H1
1+
$10.560
10+
$9.710
25+
$9.310
100+
$8.200
RFQ
177
In-stock
IXYS IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT Through Hole PLUS 247-3 + 175 C Tube 880 W Single 650 V 1.75 V 240 A 100 nA 20 V
IXXX160N65B4
1+
$13.080
10+
$12.030
25+
$11.530
100+
$10.160
RFQ
45
In-stock
IXYS IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT Through Hole PLUS 247-3 + 175 C Tube 940 W Single 650 V 1.54 V 310 A 200 nA 20 V
IXXX160N65C4
1+
$13.080
10+
$12.030
25+
$11.530
100+
$10.160
RFQ
18
In-stock
IXYS IGBT Transistors 650V/290A TRENCH IGBT GENX4 XPT Through Hole PLUS 247-3 + 175 C Tube 940 W Single 650 V 1.7 V 290 A 200 nA 20 V
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