- Manufacture :
- Package / Case :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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130
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT UFS Series | Through Hole | TO-247-3 | + 150 C | Tube | 208 W | Single | 600 V | 1.45 V | 60 A | +/- 250 nA | +/- 20 V | |||
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185
In-stock
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onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | |||
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252
In-stock
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onsemi | IGBT Transistors 600V/30A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 167 W | Single | 600 V | 1.45 V | 60 A | 100 nA | 30 V | |||
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146
In-stock
|
onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | |||
|
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456
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V IGBT UFS N-Channel | Through Hole | TO-247-3 | + 150 C | Tube | 208 W | Single | 600 V | 1.45 V | 60 A | +/- 250 nA | +/- 20 V | |||
|
|
204
In-stock
|
onsemi | IGBT Transistors 600V/30A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 167 W | Single | 600 V | 1.45 V | 60 A | 100 nA | 30 V |
