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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4RC10SDPBF
1+
$1.850
10+
$1.570
100+
$1.250
500+
$1.100
RFQ
288
In-stock
Infineon Technologies IGBT Transistors 600V DC-1 KHZ (STD) COPACK IGBT SMD/SMT DPAK-3 + 150 C Tube 38 W Single 600 V 1.7 V 14 A   +/- 20 V
IRG4BC15UD-LPBF
1+
$2.060
10+
$1.750
100+
$1.400
500+
$1.230
RFQ
266
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 10-30kHz Through Hole TO-262-3 + 150 C Tube 49 W Single 600 V 2.02 V 14 A 100 nA +/- 20 V
IRG4BC10SD-SPBF
1+
$2.110
10+
$1.790
100+
$1.430
500+
$1.250
RFQ
370
In-stock
Infineon Technologies IGBT Transistors 600V DC-1kHz SMD/SMT D-PAK-3   Tube 38 W Single 600 V 1.8 V 14 A   +/- 20 V
STGPL6NC60DI
1+
$1.670
10+
$1.420
100+
$1.140
500+
$0.993
RFQ
462
In-stock
STMicroelectronics IGBT Transistors 600 V - 6 A Hyper fast IGBT Through Hole TO-220   Tube 56 W   600 V 1.9 V 14 A 100 nA 20 V
STGP7H60DF
1+
$1.580
10+
$1.340
100+
$1.070
500+
$0.937
RFQ
921
In-stock
STMicroelectronics IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A h... Through Hole TO-220-3 + 175 C Tube 88 W Single 600 V 1.95 V 14 A 250 nA 20 V
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