2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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143
In-stock
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IXYS | IGBT Transistors GenX3 600V IGBT | Through Hole | TO-247AD-3 | + 150 C | Tube | 380 W | Single | 600 V | 2.2 V | 75 A | 100 nA | +/- 20 V | |||
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VIEW | Infineon Technologies | IGBT Transistors 600V Warp2 150kHz | Through Hole | TO-247AD-3 | Tube | 390 W | Single | 600 V | 2 V | 75 A | +/- 20 V |
