PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRGB20B60PD1PBF		GET PRICE	PDF RFQ	57,400 In-stock	Infineon Technologies	IGBT Transistors 600V Warp2 150kHz	Through Hole	TO-220-3	+ 150 C	Tube	215 W	Single	600 V	2.05 V	40 A	100 nA	+/- 20 V
IRG4BC40UPBF	1+ $3.490 10+ $2.970 100+ $2.570 250+ $2.440		PDF RFQ	608 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 8-60kHz	Through Hole	TO-220-3		Tube	160 W	Single	600 V	2.1 V	40 A		+/- 20 V
STGP20V60F	1+ $2.060 10+ $1.750 100+ $1.400 500+ $1.230		PDF RFQ	947 In-stock	STMicroelectronics	IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop	Through Hole	TO-220-3	+ 175 C	Tube	167 W	Single	600 V	2.2 V	40 A	250 nA	20 V
IRG4BC40WPBF	1+ $3.030 10+ $2.570 100+ $2.230 250+ $2.110		PDF RFQ	350 In-stock	IR / Infineon	IGBT Transistors 600V Warp 60-150kHz	Through Hole	TO-220-3		Tube	160 W	Single	600 V	2.5 V	40 A		+/- 20 V