IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IKW30N60H3	1+ $3.790 10+ $3.220 100+ $2.790 250+ $2.650		PDF RFQ	2,910 In-stock	Infineon Technologies	IGBT Transistors 600V 30A 187W	Through Hole	TO-247-3	+ 175 C	Tube	187 W	Single	600 V	2.5 V	60 A	100 nA	20 V
	K30H603	1+ $3.790 10+ $3.220 100+ $2.790 250+ $2.650		PDF RFQ	2,400 In-stock	Infineon Technologies	IGBT Transistors 600V 30A 187W	Through Hole	TO-247-3	+ 175 C	Tube	187 W	Single	600 V	2.5 V	60 A	100 nA	20 V
	IKW20N60H3	1+ $3.050 10+ $2.600 100+ $2.250 250+ $2.140		PDF RFQ	61 In-stock	Infineon Technologies	IGBT Transistors 600V 20A 170W	Through Hole	TO-247-3	+ 175 C	Tube	170 W	Single	600 V	2.5 V	40 A	100 nA	20 V
	IKW20N60H3FKSA1	1+ $3.050 10+ $2.600 100+ $2.250 250+ $2.140		PDF RFQ	240 In-stock	Infineon Technologies	IGBT Transistors 600V 20A 170W	Through Hole	TO-247-3	+ 175 C	Tube	170 W	Single	600 V	2.5 V	40 A	100 nA	20 V

IKW30N60H3

IKW30N60H3

Infineon Technologies

IGBT Transistors 600V 30A 187W

Stock : 2,910

1+: $3.790

10+: $3.220

100+: $2.790

250+: $2.650

K30H603

K30H603

Infineon Technologies

IGBT Transistors 600V 30A 187W

Stock : 2,400

1+: $3.790

10+: $3.220

100+: $2.790

250+: $2.650

IKW20N60H3

IKW20N60H3

Infineon Technologies

IGBT Transistors 600V 20A 170W

Stock : 61

1+: $3.050

10+: $2.600

100+: $2.250

250+: $2.140

Default Photo

IKW20N60H3FKSA1

Infineon Technologies

IGBT Transistors 600V 20A 170W

Stock : 240

1+: $3.050

10+: $2.600

100+: $2.250

250+: $2.140

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