- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
31 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,978
In-stock
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Fairchild Semiconductor | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 100 nA | +/- 20 V | |||
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1,723
In-stock
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Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | 100 nA | +/- 20 V | |||
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3,693
In-stock
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Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 20 V | ||||
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4,060
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast Trench IGBT | Through Hole | TO-247-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V | |||||
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676
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/12A | Through Hole | TO-3PF-3 | + 150 C | Tube | 75 W | Single | 600 V | 2.1 V | 23 A | +/- 100 nA | +/- 20 V | |||
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490
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/40A FS Planar IGBT Gen 2 | Through Hole | TO-247-3 | + 175 C | Tube | 349 W | Single | 600 V | 2.1 V | 80 A | 400 nA | +/- 20 V | |||
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6,000
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 600 V | 2.1 V | 100 nA | +/- 20 V | ||||
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634
In-stock
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IR / Infineon | IGBT Transistors 600V Low-Vceon | Through Hole | TO-220FP-3 | Tube | 44 W | Single | 600 V | 2.1 V | 16 A | +/- 20 V | |||||
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608
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-220-3 | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 20 V | |||||
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178
In-stock
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Infineon Technologies | IGBT Transistors 600V Low VCEon Trench IGBT | Through Hole | TO-247-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V | |||||
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596
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-220FP-3 | Tube | 34 W | Single | 600 V | 2.1 V | 11.4 A | +/- 20 V | |||||
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GET PRICE |
2,710
In-stock
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onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-3P-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 100 nA | +/- 20 V | ||
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95
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 20 V | |||||
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242
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-220-3 | Tube | 60 W | Single | 600 V | 2.1 V | 13 A | +/- 20 V | |||||
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242
In-stock
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Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 305 W | Single | 600 V | 2.1 V | 80 A | 100 nA | 20 V | |||
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371
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-220FP-3 | + 150 C | Tube | 45 W | Single | 600 V | 2.1 V | 17 A | 100 nA | +/- 20 V | |||
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35
In-stock
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IR / Infineon | IGBT Transistors 600V co-pack Auto Trench IGBT | Through Hole | TO-247-3 | Tube | 454 W | 600 V | 2.1 V | 140 A | 100 nA | 20 V | |||||
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611
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-220-3 | Tube | 60 W | Single | 600 V | 2.1 V | 13 A | +/- 20 V | |||||
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50
In-stock
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IXYS | IGBT Transistors 35 Amps 600V | Through Hole | TO-220-3 | + 150 C | Tube | Single | 600 V | 2.1 V | +/- 20 V | ||||||
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70
In-stock
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IR / Infineon | IGBT Transistors 600V co-pack Auto Trench IGBT | Through Hole | TO-247-3 | Tube | 454 W | 600 V | 2.1 V | 140 A | 100 nA | 20 V | |||||
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240
In-stock
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Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 305 W | Single | 600 V | 2.1 V | 80 A | 100 nA | 20 V | |||
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22
In-stock
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IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 75A | Through Hole | ISOPLUS 247-3 | + 150 C | Tube | 200 W | 600 V | 2.1 V | 75 A | 100 nA | +/- 20 V | ||||
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5,500
In-stock
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Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 305 W | Single | 600 V | 2.1 V | 80 A | 100 nA | 20 V | |||
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20
In-stock
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IXYS | IGBT Transistors 35 Amps 600V | Through Hole | TO-247-3 | + 150 C | Tube | Single | 600 V | 2.1 V | +/- 20 V | ||||||
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30
In-stock
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IXYS | IGBT Transistors 35 Amps 600V | Through Hole | TO-247-3 | + 150 C | Tube | Single | 600 V | 2.1 V | +/- 20 V | ||||||
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3,400
In-stock
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onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-264-3 | + 150 C | Tube | 250 W | Single | 600 V | 2.1 V | 160 A | +/- 100 nA | +/- 20 V | |||
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3,870
In-stock
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Fairchild Semiconductor | IGBT Transistors 600 V 80 A 79 W | Through Hole | TO-3PF | + 175 C | Tube | 79 W | 600 V | 2.1 V | 80 A | 400 nA | 20 V | ||||
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1,740
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast Trench IGBT | Through Hole | TO-247AD-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V | |||||
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VIEW | Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 20 V | ||||
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VIEW | Fairchild Semiconductor | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 100 nA | +/- 20 V |