- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Gate-Emitter Leakage Current :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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435
In-stock
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Infineon Technologies | IGBT Transistors 600V DC-1kHz | Through Hole | TO-220-3 | + 150 C | Tube | 60 W | Single | 600 V | 1.4 V | 19 A | 100 nA | +/- 20 V | ||||
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363
In-stock
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Infineon Technologies | IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 1.4 V | 34 A | 100 nA | +/- 20 V | ||||
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14
In-stock
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IXYS | IGBT Transistors GenX3 XPT 600V | Through Hole | TO-264-3 | + 175 C | Tube | 1.63 kW | Single | 600 V | 1.4 V | 380 A | 200 nA | +/- 20 V | ||||
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VIEW | Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT UFS Series | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.4 V | 70 A | +/- 100 nA | +/- 20 V |