- Manufacture :
- Package / Case :
- Gate-Emitter Leakage Current :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
986
In-stock
|
STMicroelectronics | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | Through Hole | TO-220-3 FP | + 175 C | Tube | 37 W | Single | 600 V | 2.4 V | 60 A | 250 nA | 20 V | ||||
|
891
In-stock
|
STMicroelectronics | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | Through Hole | TO-220 | + 175 C | Tube | 260 W | Single | 600 V | 2.4 V | 60 A | 250 nA | 20 V | ||||
|
220
In-stock
|
Infineon Technologies | IGBT Transistors 600V HI SPEED SW IGBT | Through Hole | PG-TO-247-3 | Tube | 187 W | 600 V | 2.4 V | 60 A | 100 nA | 20 V | ||||||
|
421
In-stock
|
Infineon Technologies | IGBT Transistors IGBT 600V | Through Hole | PG-TO-220-3 | Tube | 170 W | 600 V | 2.4 V | 40 A | 100 nA | 20 V | ||||||
|
228
In-stock
|
Infineon Technologies | IGBT Transistors 600V HI SPEED SW IGBT | Through Hole | PG-TO-247-3 | Tube | 170 W | 600 V | 2.4 V | 40 A | 100 nA | 20 V | ||||||
|
354
In-stock
|
STMicroelectronics | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | Through Hole | TO-247 | + 175 C | Tube | 260 W | Single | 600 V | 2.4 V | 60 A | 250 nA | 20 V | ||||
|
396
In-stock
|
Infineon Technologies | IGBT Transistors HI SPEED SWITCHING 600V 30A | Through Hole | PG-TO-220-3 | Tube | 43 W | 600 V | 2.4 V | 18 A | 100 nA | 20 V |