- Manufacture :
- Package / Case :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
14,110
In-stock
|
Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 50A | Through Hole | TO-247-3 | + 175 C | Tube | 333 W | Single | 600 V | 1.9 V | 90 A | 100 nA | 20 V | |||
|
|
329
In-stock
|
Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 50A | Through Hole | TO-220-3 | + 175 C | Tube | 333 W | Single | 600 V | 1.9 V | 90 A | 100 nA | 20 V | |||
|
|
230
In-stock
|
Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 333 W | Single | 600 V | 1.9 V | 90 A | 100 nA | 20 V | |||
|
|
240
In-stock
|
Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 50A | Through Hole | TO-247-3 | + 175 C | Tube | 333 W | Single | 600 V | 1.9 V | 90 A | 100 nA | 20 V | |||
|
|
165
In-stock
|
onsemi | IGBT Transistors FSII 45A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2 V | 90 A | 200 nA | +/- 20 V | |||
|
|
189
In-stock
|
onsemi | IGBT Transistors FSII 45A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2 V | 90 A | 100 nA | +/- 20 V | |||
|
|
399
In-stock
|
Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-247-3 | Tube | 520 W | Single | 600 V | 1.8 V | 90 A | +/- 20 V | |||||
|
|
500
In-stock
|
Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 50A | Through Hole | TO-220-3 | + 175 C | Tube | 333 W | Single | 600 V | 1.9 V | 90 A | 100 nA | 20 V |