- Manufacture :
- Maximum Operating Temperature :
- Configuration :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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217
In-stock
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IXYS | IGBT Transistors XPT 600V IGBT 300A | Through Hole | PLUS 247-3 | + 175 C | Tube | 2.3 kW | Single | 600 V | 1.3 V | 550 A | 200 nA | +/- 20 V | ||||
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647
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AD-3 | + 175 C | Tube | 483 W | Single | 600 V | 1.65 V | 140 A | 200 nA | 20 V | ||||
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14
In-stock
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IXYS | IGBT Transistors GenX3 XPT 600V | Through Hole | TO-264-3 | + 175 C | Tube | 1.63 kW | Single | 600 V | 1.4 V | 380 A | 200 nA | +/- 20 V | ||||
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50
In-stock
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IXYS | IGBT Transistors 60 Amps 600V | Through Hole | ISOPLUS i4-PAC-5 | + 150 C | Tube | 200 W | Single | 600 V | 1.6 V | 65 A | 200 nA | +/- 20 V | ||||
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17
In-stock
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IXYS | IGBT Transistors 30 Amps 600V | Through Hole | ISOPLUS i4-PAC-5 | + 150 C | Tube | 100 W | Dual | 600 V | 1.9 V | 30 A | 200 nA | +/- 20 V | ||||
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21
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AC-3 | + 175 C | Tube | 483 W | Single | 600 V | 1.65 V | 140 A | 200 nA | 20 V | ||||
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185
In-stock
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onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | ||||
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142
In-stock
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onsemi | IGBT Transistors 600V/40A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 417 W | Single | 600 V | 2 V | 80 A | 200 nA | 20 V | ||||
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165
In-stock
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onsemi | IGBT Transistors FSII 45A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2 V | 90 A | 200 nA | +/- 20 V | ||||
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46
In-stock
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onsemi | IGBT Transistors FSII 75A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 595 W | Single | 600 V | 1.7 V | 100 A | 200 nA | +/- 20 V | ||||
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206
In-stock
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onsemi | IGBT Transistors 600V/60A IGBT LPT TO-247 | Through Hole | TO-247-3 | + 150 C | Tube | 298 W | Single | 600 V | 2.6 V | 120 A | 200 nA | 20 V | ||||
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146
In-stock
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onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | ||||
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150
In-stock
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onsemi | IGBT Transistors FSII 50A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 417 W | Single | 600 V | 1.8 V | 100 A | 200 nA | +/- 20 V | ||||
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210
In-stock
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onsemi | IGBT Transistors 600V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2.2 V | 70 A | 200 nA | 20 V | ||||
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210
In-stock
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onsemi | IGBT Transistors 600V/40A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 366 W | Single | 600 V | 1.85 V | 80 A | 200 nA | 20 V | ||||
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50
In-stock
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IXYS | IGBT Transistors XPT 600V IGBT GenX3 | Through Hole | TO-264-3 | + 175 C | Tube | 1.63 kW | Single | 600 V | 1.6 V | 340 A | 200 nA | +/- 20 V |