- Manufacture :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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91
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AC-3 | + 175 C | Tube | 192 W | Single | 600 V | 1.65 V | 47 A | 100 nA | 20 V | |||
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21
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AC-3 | + 175 C | Tube | 483 W | Single | 600 V | 1.65 V | 140 A | 200 nA | 20 V | |||
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90
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | Through Hole | TO-247AC-3 | + 175 C | Tube | 140 W | Single | 600 V | 1.97 V | 32 A | 100 nA | +/- 20 V | |||
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124
In-stock
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IR / Infineon | IGBT Transistors 600V IGBT w/ Ultra-Low VF | Through Hole | TO-247AC-3 | + 175 C | Tube | 278 W | Single | 600 V | 1.9 V | 74 A | 100 nA | 20 V | |||
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37
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AC-3 | + 175 C | Tube | 306 W | Single | 600 V | 1.65 V | 80 A | 100 nA | 20 V | |||
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28
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AC-3 | + 175 C | Tube | 330 W | Single | 600 V | 1.65 V | 95 A | 100 nA | 20 V | |||
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2
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | Through Hole | TO-247AC-3 | + 175 C | Tube | 206 W | Single | 600 V | 2.15 V | 47 A | 100 nA | +/- 20 V |