IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	HGTG30N60C3D	1+ $6.820 10+ $6.160 25+ $5.880 100+ $5.100		PDF RFQ	415 In-stock	Fairchild Semiconductor	IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para	Through Hole	TO-247-3	+ 150 C	Tube	208 W	Single	600 V	1.5 V	63 A	+/- 100 nA	+/- 20 V
	STGWA19NC60HD	1+ $2.000 10+ $2.000 100+ $2.000 250+ $1.000		PDF RFQ	6,000 In-stock	STMicroelectronics	IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode	Through Hole	TO-247	+ 150 C	Tube	208 W	Single	600 V	1.8 V	52 A	+/- 100 nA	+/- 20 V