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Maximum Operating Temperature :
Collector-Emitter Saturation Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
K40H603
Per Unit
$4.620
RFQ
3,620
In-stock
Infineon Technologies IGBT Transistors 600V 40A 306W Through Hole TO-247-3 + 150 C Tube 306 W   600 V 1.95 V 80 A 100 nA 20 V
IGW40N60H3
1+
$3.940
10+
$3.350
100+
$2.910
250+
$2.760
RFQ
190
In-stock
Infineon Technologies IGBT Transistors 600V 40A 306W Through Hole TO-247 + 150 C Tube 306 W   600 V 1.95 V 80 A 100 nA 20 V
IRGP6650DPBF
1+
$5.360
10+
$4.560
25+
$4.480
100+
$3.950
RFQ
37
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT TO-247 Through Hole TO-247AC-3 + 175 C Tube 306 W Single 600 V 1.65 V 80 A 100 nA 20 V
IRGP6650D-EPBF
1+
$5.950
10+
$5.060
25+
$4.970
100+
$4.380
RFQ
40
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT TO-247 Through Hole TO-247AD-3 + 175 C Tube 306 W Single 600 V 1.65 V 80 A 100 nA 20 V
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