PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
STGWT80V60F	1+ $11.420 10+ $10.330 25+ $9.850 100+ $8.550	PDF RFQ	295 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-3P	+ 175 C	Tube	469 W	Single	600 V	1.85 V	120 A	250 nA	20 V
STGW80V60DF	1+ $7.140 10+ $6.460 25+ $6.160 100+ $5.340	PDF RFQ	24 In-stock	STMicroelectronics	IGBT Transistors Trench gate V series 600V 80A HiSpd	Through Hole	TO-247-3	+ 175 C	Tube	469 W	Single	600 V	1.85 V	120 A	250 nA	20 V
STGW80V60F	1+ $11.620 10+ $10.460 25+ $9.530 50+ $8.880	PDF RFQ	600 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	469 W	Single	600 V	1.85 V	120 A	250 nA	20 V
STGWT80V60DF	1+ $8.300 10+ $7.500 25+ $7.150 50+ $6.660	PDF RFQ	82 In-stock	STMicroelectronics	IGBT Transistors Trench gte FieldStop IGBT 600V 80A	Through Hole	TO-3P	+ 175 C	Tube	469 W	Single	600 V	1.85 V	120 A	250 nA	+/- 20 V