1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT proliferation | Through Hole | TO-3PN | + 175 C | Tube | 238 W | Single | 600 V | 1.8 V | 80 A | 400 nA | 30 V |
