- Package / Case :
- Collector-Emitter Saturation Voltage :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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458
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 260 W | Single | 600 V | 1.55 V | 60 A | 250 nA | 20 V | ||||
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501
In-stock
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STMicroelectronics | IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop | Through Hole | TO-247-3 | + 175 C | Tube | 260 W | Single | 600 V | 1.85 V | 60 A | 250 nA | 20 V | ||||
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891
In-stock
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STMicroelectronics | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | Through Hole | TO-220 | + 175 C | Tube | 260 W | Single | 600 V | 2.4 V | 60 A | 250 nA | 20 V | ||||
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960
In-stock
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STMicroelectronics | IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop | Through Hole | TO-220-3 | + 175 C | Tube | 260 W | Single | 600 V | 2.3 V | 60 A | 250 nA | 20 V | ||||
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354
In-stock
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STMicroelectronics | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | Through Hole | TO-247 | + 175 C | Tube | 260 W | Single | 600 V | 2.4 V | 60 A | 250 nA | 20 V | ||||
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600
In-stock
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STMicroelectronics | IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop | Through Hole | TO-3P-3 | + 175 C | Tube | 260 W | Single | 600 V | 2.3 V | 60 A | 250 nA | 20 V | ||||
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590
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3P | + 175 C | Tube | 260 W | Single | 600 V | 1.55 V | 60 A | 250 nA | 20 V |