- Manufacture :
- Mounting Style :
- Package / Case :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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586
In-stock
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STMicroelectronics | IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop | Through Hole | TO-3PF-3 | + 175 C | Tube | 58 W | Single | 600 V | 2.3 V | 60 A | 250 nA | 20 V | |||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 58 W | Single | 600 V | 1.85 V | 60 A | 250 nA | +/- 20 V | |||
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346
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH ULTRAFAST IGBT | SMD/SMT | DPAK-3 | + 175 C | Tube | 58 W | Single | 600 V | 1.75 V | 11 A | 100 nA | 20 V | |||
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519
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | Through Hole | TO-220AB-3 | + 175 C | Tube | 58 W | Single | 600 V | 2.2 V | 11 A | 100 nA | +/- 20 V | |||
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45
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH ULTRAFAST IGBT | SMD/SMT | D-PAK-3 | + 175 C | Tube | 58 W | Single | 600 V | 1.75 V | 11 A | +/- 100 nA | +/- 30 V |