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Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGFW30V60F
1+
$3.450
10+
$2.930
100+
$2.540
250+
$2.410
RFQ
586
In-stock
STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop Through Hole TO-3PF-3 + 175 C Tube 58 W Single 600 V 2.3 V 60 A 250 nA 20 V
Default Photo
1+
$3.980
10+
$3.380
100+
$2.930
250+
$2.780
RFQ
600
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3PF + 175 C Tube 58 W Single 600 V 1.85 V 60 A 250 nA +/- 20 V
IRGR4607DPBF
1+
$1.760
10+
$1.490
100+
$1.190
500+
$1.040
RFQ
346
In-stock
IR / Infineon IGBT Transistors 600V TRENCH ULTRAFAST IGBT SMD/SMT DPAK-3 + 175 C Tube 58 W Single 600 V 1.75 V 11 A 100 nA 20 V
IRGB4607DPBF
1+
$1.940
10+
$1.650
100+
$1.320
500+
$1.150
RFQ
519
In-stock
IR / Infineon IGBT Transistors 600V TRENCH IGBT ULTRAFAST Through Hole TO-220AB-3 + 175 C Tube 58 W Single 600 V 2.2 V 11 A 100 nA +/- 20 V
IRGS4607DPBF
1+
$2.030
10+
$1.720
100+
$1.380
500+
$1.200
RFQ
45
In-stock
IR / Infineon IGBT Transistors 600V TRENCH ULTRAFAST IGBT SMD/SMT D-PAK-3 + 175 C Tube 58 W Single 600 V 1.75 V 11 A +/- 100 nA +/- 30 V
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