IGBT Transistors - Kaimeite

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3 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRG4PH30KDPBF	GET PRICE	PDF RFQ	3,951 In-stock	IR / Infineon	IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT	Through Hole	TO-247-3	+ 150 C	Tube	100 W	Single	1.2 kV	3.1 V	20 A		+/- 20 V
IRG4PH30KPBF	GET PRICE	PDF RFQ	24,700 In-stock	IR / Infineon	IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB...	Through Hole	TO-247-3	+ 150 C	Tube	100 W	Single	1.2 kV	3.1 V	20 A		+/- 20 V
FGAF40N60UFDTU	GET PRICE VIEW	PDF RFQ		Fairchild Semiconductor	IGBT Transistors Ultrafast	Through Hole	TO-3PF-3	+ 150 C	Tube	100 W	Single	600 V	3.1 V	40 A	+/- 100 nA	+/- 20 V

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