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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXYH40N120C3
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53
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IXYS IGBT Transistors GenX3 1200V XPT IGBT Through Hole TO-247-3 + 175 C Tube 577 W Single 1200 V 3.6 V 70 A 100 nA 30 V
IXGP24N120C3
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RFQ
84
In-stock
IXYS IGBT Transistors 24 Amps 1200V Through Hole TO-220-3 + 150 C Tube 250 W Single 1.2 kV 3.6 V 48 A 100 nA +/- 20 V
IXGR24N120C3D1
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RFQ
22
In-stock
IXYS IGBT Transistors 48 Amps 1200V 2.75 Rds Through Hole ISOPLUS 247-3 + 150 C Tube 200 W Single 1.2 kV 3.6 V 48 A 100 nA +/- 20 V
IXGH24N120C3
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RFQ
35
In-stock
IXYS IGBT Transistors 48 Amps 1200V Through Hole TO-247 + 150 C Tube 250 W Single 1200 V 3.6 V 48 A 100 nA 20 V
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