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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXYN100N65C3H1
1+
$23.160
5+
$22.920
10+
$21.360
25+
$20.410
RFQ
119
In-stock
IXYS IGBT Transistors 650V/166A XPT Copacked SOT-227B SMD/SMT SOT-227B-4 + 175 C Tube 600 W Single 650 V 1.85 V 166 A 100 nA 30 V
IXYH40N65C3H1
1+
$6.740
10+
$6.090
25+
$5.810
100+
$5.040
RFQ
452
In-stock
IXYS IGBT Transistors 650V/80A XPT Copacked TO-247 Through Hole TO-247-3 + 175 C Tube 300 W Single 650 V 1.85 V 80 A 100 nA 30 V
IXGK120N120A3
1+
$23.990
5+
$23.740
10+
$22.130
25+
$21.140
RFQ
75
In-stock
IXYS IGBT Transistors 120 Amps 1200V Through Hole TO-264-3 + 150 C Tube 830 W Single 1.2 kV 1.85 V 240 A 400 nA +/- 20 V
IXyH100N65C3
1+
$8.040
10+
$7.270
25+
$6.930
100+
$6.020
RFQ
98
In-stock
IXYS IGBT Transistors 650V/200A XPT C3-Class TO-247 Through Hole TO-247-3 + 175 C Tube 830 W Single 650 V 1.85 V 200 A 100 nA 30 V
IXGX120N120A3
1+
$26.230
5+
$25.960
10+
$24.200
25+
$23.110
RFQ
24
In-stock
IXYS IGBT Transistors 120 Amps 1200V Through Hole PLUS 247-3 + 150 C Tube 830 W Single 1.2 kV 1.85 V 240 A 400 nA +/- 20 V
IXYH40N65C3
1+
$6.190
10+
$5.600
25+
$5.340
100+
$4.630
RFQ
24
In-stock
IXYS IGBT Transistors 650V/80A XPT C3-Class TO-247 Through Hole TO-247-3 + 175 C Tube 300 W Single 650 V 1.85 V 80 A 100 nA 30 V
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