- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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75
In-stock
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IXYS | IGBT Transistors 120 Amps 1200V | Through Hole | TO-264-3 | + 150 C | Tube | 830 W | Single | 1.2 kV | 1.85 V | 240 A | 400 nA | +/- 20 V | |||
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24
In-stock
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IXYS | IGBT Transistors 120 Amps 1200V | Through Hole | PLUS 247-3 | + 150 C | Tube | 830 W | Single | 1.2 kV | 1.85 V | 240 A | 400 nA | +/- 20 V | |||
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13,000
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp2 150kHz | Through Hole | TO-247-3 | + 150 C | Tube | 308 W | Single | 600 V | 1.85 V | 60 A | 100 nA | +/- 20 V |
