- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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99
In-stock
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IXYS | IGBT Transistors VRY HI VOLT NPT IGBT 1700V, 72A | Through Hole | TO-247-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 4 V | 32 A | 100 nA | +/- 20 V | |||
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30
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 230 W | Single | 1200 V | 4 V | 36 A | 100 nA | 30 V | |||
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80
In-stock
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IXYS | IGBT Transistors GenX3 1200V XPT IGBT | Through Hole | TO-220-3 | + 175 C | Tube | 278 W | Single | 1200 V | 4 V | 40 A | 100 nA | 30 V | |||
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28
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 105 W | Single | 1200 V | 4 V | 21 A | 100 nA | 30 V | |||
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9
In-stock
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IXYS | IGBT Transistors GenX3 1400V IGBTs w/ Diode | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 1400 V | 4 V | 42 A | 100 nA | +/- 20 V | |||
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13
In-stock
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IXYS | IGBT Transistors 24 Amps 1700V 5 Rds | Through Hole | PLUS 247-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 4 V | 32 A | 100 nA | +/- 20 V | |||
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VIEW | IXYS | IGBT Transistors GenX3 1200V XPT IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 278 W | Single | 1200 V | 4 V | 40 A | 100 nA | 30 V |
