IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRG4PC30SPBF	GET PRICE	PDF RFQ	272 In-stock	IR / Infineon	IGBT Transistors 600V DC-1kHz	Through Hole	TO-247-3		Tube	100 W	Single	600 V	1.6 V	34 A		+/- 20 V
IRG4BC30SPBF	GET PRICE	PDF RFQ	363 In-stock	Infineon Technologies	IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT	Through Hole	TO-220-3	+ 150 C	Tube	100 W	Single	600 V	1.4 V	34 A	100 nA	+/- 20 V
IXBF20N300	GET PRICE	PDF RFQ	18 In-stock	IXYS	IGBT Transistors	Through Hole	ISOPLUS-i4-3	+ 150 C	Tube	150 W	Single	3 kV	2.7 V	34 A		+/- 20 V
AUIRG4BC30S-S	GET PRICE	PDF RFQ	300 In-stock	Infineon Technologies	IGBT Transistors 600V AUTO DC-1 KHZ DISCRETE IGBT	SMD/SMT	D-PAK-3		Tube	100 W	Single	600 V	1.6 V	34 A		+/- 20 V

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