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Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4BC20SPBF
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RFQ
435
In-stock
Infineon Technologies IGBT Transistors 600V DC-1kHz Through Hole TO-220-3 + 150 C Tube 60 W Single 600 V 1.4 V 19 A 100 nA +/- 20 V
IRGIB15B60KD1P
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RFQ
306
In-stock
Infineon Technologies IGBT Transistors 600V Low-Vceon Through Hole TO-220FP-3   Tube 52 W Single 600 V 1.8 V 19 A   +/- 20 V
IRG4BC20SD-SPBF
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RFQ
390
In-stock
Infineon Technologies IGBT Transistors 600V DC-1kHz SMD/SMT D-PAK-3   Tube 60 W Single 600 V 1.4 V 19 A   +/- 20 V
IRG4BC20SDPBF
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RFQ
111
In-stock
IR / Infineon IGBT Transistors 600V DC-1kHz Through Hole TO-220-3   Tube 60 W Single 600 V 1.6 V 19 A   +/- 20 V
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