IGBT Transistors - Kaimeite

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3 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IGW25N120H3	GET PRICE	PDF RFQ	477 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 175 C	Tube	326 W	Single	1200 V	2.7 V	50 A	600 mA	20 V
IGW25N120H3XK	GET PRICE	PDF RFQ	220 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 175 C	Tube	326 W	Single	1200 V	2.7 V	50 A	600 mA	20 V
IGW25N120H3FKSA1	GET PRICE	PDF RFQ	230 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 175 C	Tube	326 W	Single	1200 V	2.7 V	50 A	600 mA	20 V

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