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Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGF30H60DF
1+
$2.920
10+
$2.480
100+
$2.150
250+
$2.040
RFQ
986
In-stock
STMicroelectronics IGBT Transistors 600V 30A High Speed Trench Gate IGBT Through Hole TO-220-3 FP + 175 C Tube 37 W Single 600 V 2.4 V 60 A 250 nA 20 V
STGF15H60DF
1+
$2.190
10+
$1.860
100+
$1.490
500+
$1.300
RFQ
795
In-stock
STMicroelectronics IGBT Transistors Trench gate H series 600V 15A HiSpd Through Hole TO-220-3 FP + 175 C Tube 30 W Single 600 V 1.6 V 30 A 250 nA +/- 20 V
STGF10H60DF
1+
$1.510
10+
$1.280
100+
$1.020
500+
$0.893
VIEW
RFQ
STMicroelectronics IGBT Transistors Trench gate H series 600V 10A HiSpd Through Hole TO-220-3 FP + 175 C Tube 30 W Single 600 V 1.5 V 20 A 250 nA +/- 20 V
STGF20H60DF
1+
$3.240
10+
$2.600
100+
$2.370
250+
$2.130
RFQ
767
In-stock
STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT Through Hole TO-220-3 FP + 175 C Tube 37 W Single 600 V 2 V 40 A 250 nA 20 V
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