- Manufacture :
- Package / Case :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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192
In-stock
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IR / Infineon | IGBT Transistors IGBT DISCRETES | Through Hole | TO-220-3 | + 150 C | Tube | 160 W | Single | 330 V | 1.69 V | 70 A | +/- 100 nA | +/- 30 V | ||||
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VIEW | Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT UFS Series | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.4 V | 70 A | +/- 100 nA | +/- 20 V |