- Package / Case :
- Maximum Gate Emitter Voltage :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
275
In-stock
|
Fairchild Semiconductor | IGBT Transistors FS2 TIGBT excellent swtching performance | Through Hole | TO-247-4 | + 175 C | Tube | 555 W | Single | 1.2 kV | 1.8 V | 80 A | +/- 400 nA | +/- 25 V | ||||
|
143
In-stock
|
Fairchild Semiconductor | IGBT Transistors 1200V 40A FS2 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 1.2 kV | 2 V | 80 A | +/- 400 nA | +/- 30 V |