- Mounting Style :
- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
29 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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656
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 690 W | Single | 1.2 kV | 2.9 V | 134 A | 100 nA | +/- 20 V | ||||
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167
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 150 C | Tube | 156 W | Single | 1.2 kV | 1.5 V | 30 A | 100 nA | +/- 20 V | ||||
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512
In-stock
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IR / Infineon | IGBT Transistors 1200V DC-1kHz | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 1.75 V | 57 A | 100 nA | 20 V | ||||
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305
In-stock
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IXYS | IGBT Transistors 60 Amps 1200V | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | 1.2 kV | 2.96 V | 50 A | 100 nA | +/- 20 V | |||||
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340
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT 81A Auto 1.37V at 33A Low VCE | Through Hole | TO-220-3 | Tube | 543 W | 1.2 kV | 1.57 V | 141 A | 100 nA | 20 V | ||||||
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167
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | ||||
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202
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz Single IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 1.2 kV | 3.05 V | 40 A | 100 nA | +/- 20 V | ||||
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181
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | ||||
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22
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1.2 kV | 3.3 V | 100 A | 100 nA | 30 V | ||||
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GET PRICE |
4,850
In-stock
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IXYS | IGBT Transistors GenX3 1200V IGBT | SMD/SMT | TO-263-3 | + 150 C | Tube | 300 W | Single | 1.2 kV | 2.96 V | 60 A | 100 nA | +/- 20 V | |||
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35
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 297 W | Single | 1.2 kV | 2.5 V | 52 A | 100 nA | 30 V | ||||
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34
In-stock
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IXYS | IGBT Transistors IGBT, Diode 1200V, 75A | Through Hole | TO-247-3 | + 150 C | Tube | 380 W | Single | 1.2 kV | 2.9 V | 75 A | 100 nA | +/- 20 V | ||||
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280
In-stock
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IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A | Through Hole | TO-220AB-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 2.3 V | 40 A | 100 nA | +/- 20 V | ||||
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27
In-stock
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IXYS | IGBT Transistors 75Amps 1200V | Through Hole | TO-247-3 | + 150 C | Tube | 380 W | 1.2 kV | 4.4 V | 75 A | 100 nA | +/- 20 V | |||||
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63
In-stock
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Infineon Technologies | IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A | Through Hole | TO-247-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 1.9 V | 50 A | 100 nA | +/- 30 V | ||||
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24
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | T-MAX-3 | + 150 C | Tube | 625 W | Single | 1.2 kV | 3.3 V | 113 A | 100 nA | 30 V | ||||
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54
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 1.2 kV | 2.52 V | 99 A | 100 nA | +/- 20 V | ||||
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84
In-stock
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IXYS | IGBT Transistors 24 Amps 1200V | Through Hole | TO-220-3 | + 150 C | Tube | 250 W | Single | 1.2 kV | 3.6 V | 48 A | 100 nA | +/- 20 V | ||||
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119
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | ||||
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86
In-stock
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IXYS | IGBT Transistors 1200V, 12A IGBT; G Series | SMD/SMT | TO-263AA-3 | + 150 C | Tube | 100 W | Single | 1.2 kV | 2.4 V | 22 A | 100 nA | +/- 20 V | ||||
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60
In-stock
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IXYS | IGBT Transistors SGL IGBT 1200V, 80A | Through Hole | TO-247-3 | + 150 C | Tube | 360 W | Single | 1.2 kV | 2 V | 75 A | 100 nA | +/- 20 V | ||||
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22
In-stock
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IXYS | IGBT Transistors 48 Amps 1200V 2.75 Rds | Through Hole | ISOPLUS 247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 3.6 V | 48 A | 100 nA | +/- 20 V | ||||
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44
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 150 C | Tube | 231 W | Single | 1.2 kV | 1.5 V | 50 A | 100 nA | +/- 20 V | ||||
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38
In-stock
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IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A | Through Hole | TO-247-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 2.3 V | 40 A | 100 nA | +/- 20 V | ||||
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172
In-stock
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onsemi | IGBT Transistors LC IH RC OSV | Through Hole | TO-247-3 | + 175 C | Tube | 341 W | Single | 1.2 kV | 2.2 V | 40 A | 100 nA | +/- 20 V | ||||
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163
In-stock
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onsemi | IGBT Transistors LC IH RC OSV | Through Hole | TO-247-3 | + 175 C | Tube | 278 W | Single | 1.2 kV | 2.1 V | 30 A | 100 nA | +/- 20 V | ||||
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200
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-274-3 | + 150 C | Tube | 595 W | Single | 1.2 kV | 2.33 V | 105 A | 100 nA | +/- 20 V | ||||
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47
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 1.2 kV | 2.97 V | 78 A | 100 nA | +/- 20 V | ||||
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94
In-stock
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IR / Infineon | IGBT Transistors Trnch IGBT 1200V 10A single IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 210 W | Single | 1.2 kV | 2.05 V | 33 A | 100 nA | +/- 30 V |