- Manufacture :
- Mounting Style :
- Package / Case :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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10,425
In-stock
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STMicroelectronics | IGBT Transistors Ultra Fast IGBT 35A 600V | Through Hole | TO-247 | + 150 C | Tube | 200 W | 2.5 V | 60 A | 100 nA | 20 V | ||||||
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145
In-stock
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IXYS | IGBT Transistors 50 Amps 1700V 3.3 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 1.7 kV | 2.5 V | 50 A | 100 nA | +/- 20 V | ||||
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35
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 297 W | Single | 1.2 kV | 2.5 V | 52 A | 100 nA | 30 V | ||||
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28
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/105A | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1200 V | 2.5 V | 105 A | 100 nA | 30 V | ||||
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16
In-stock
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IXYS | IGBT Transistors 32 Amps 1700V 2.5 Rds | Through Hole | PLUS 247-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 2.5 V | 75 A | 100 nA | +/- 20 V | ||||
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37
In-stock
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IXYS | IGBT Transistors 72 Amps 1700 V 3.3 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 2.5 V | 75 A | 100 nA | +/- 20 V | ||||
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48
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-264-3 | + 150 C | Tube | 500 W | Single | 900 V | 2.5 V | 117 A | 100 nA | 30 V | ||||
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190
In-stock
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onsemi | IGBT Transistors 1200/20A IGBT LPT TO-24 | Through Hole | TO-247 | + 150 C | Tube | 156 W | Single | 1200 V | 2.5 V | 40 A | 100 nA | +/- 20 V | ||||
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VIEW | IXYS | IGBT Transistors 60 Amps 600V | Through Hole | ISOPLUS247 | + 150 C | Tube | 170 W | Single | 600 V | 2.5 V | 75 A | 100 nA | 20 V | ||||
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VIEW | IXYS | IGBT Transistors 24 Amps 1200 V 3.3 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 250 W | Single | 1.7 kV | 2.5 V | 50 A | 100 nA | +/- 20 V | ||||
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59
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600volt 50 Amp | Through Hole | ISOTOP-4 | + 150 C | Tube | 260 W | Single Dual Emitter | 600 V | 2.5 V | 50 A | 100 nA | 20 V |