- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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266
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 10-30kHz | Through Hole | TO-262-3 | + 150 C | Tube | 49 W | Single | 600 V | 2.02 V | 14 A | 100 nA | +/- 20 V | |||
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438
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-220-3 | + 175 C | Tube | 33.3 W | Single | 650 V | 1.95 V | 14 A | 100 nA | 20 V | |||
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462
In-stock
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STMicroelectronics | IGBT Transistors 600 V - 6 A Hyper fast IGBT | Through Hole | TO-220 | Tube | 56 W | 600 V | 1.9 V | 14 A | 100 nA | 20 V | |||||
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492
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-220-3 | + 175 C | Tube | 33.3 W | Single | 650 V | 1.9 V | 14 A | 100 nA | 20 V | |||
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2,965
In-stock
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STMicroelectronics | IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar | Through Hole | TO-220-3 | + 150 C | Tube | 75 W | Single | 2.2 V | 14 A | 100 nA | 20 V |
