IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRG4IBC30WPBF	1+ $2.740 10+ $2.330 100+ $1.860 250+ $1.770		PDF RFQ	371 In-stock	Infineon Technologies	IGBT Transistors 600V Warp 60-150kHz	Through Hole	TO-220FP-3	+ 150 C	Tube	45 W	Single	600 V	2.1 V	17 A	100 nA	+/- 20 V
	IRG4IBC30UDPBF	1+ $3.060 10+ $2.600 100+ $2.250 250+ $2.140		PDF RFQ	209 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 8-60kHz	Through Hole	TO-220FP-3	+ 150 C	Tube	45 W	Single	600 V	1.95 V	17 A	100 nA	+/- 20 V

IRG4IBC30WPBF

IRG4IBC30WPBF

Infineon Technologies

IGBT Transistors 600V Warp 60-150kHz

Stock : 371

1+: $2.740

10+: $2.330

100+: $1.860

250+: $1.770

IRG4IBC30UDPBF

IRG4IBC30UDPBF

Infineon Technologies

IGBT Transistors 600V UltraFast 8-60kHz

Stock : 209

1+: $3.060

10+: $2.600

100+: $2.250

250+: $2.140

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