- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 58 W | Single | 600 V | 1.85 V | 60 A | 250 nA | +/- 20 V | |||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 62.5 W | Single | 600 V | 1.8 V | 80 A | 250 nA | +/- 20 V | |||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 79 W | Single | 600 V | 1.85 V | 120 A | 250 nA | +/- 20 V | |||
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290
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 52 W | Single | 650 V | 1.55 V | 40 A | 250 nA | 20 V | |||
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300
In-stock
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 58 W | Single | 650 V | 1.55 V | 60 A | 250 nA | 20 V | |||
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278
In-stock
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 52 W | Single | 600 V | 1.8 V | 40 A | 250 nA | +/- 20 V | |||
|
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216
In-stock
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 62.5 W | Single | 600 V | 1.8 V | 80 A | 250 nA | 20 V |
