- Manufacture :
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- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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166
In-stock
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IXYS | IGBT Transistors | Through Hole | TO-264-3 | + 150 C | Tube | 625 W | Single | 3 kV | 2.7 V | 130 A | +/- 200 nA | +/- 25 V | |||
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22
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | SMD/SMT | TO-264-3 | + 150 C | Tube | 625 W | Single | 600 V | 2 V | 143 A | 100 nA | 30 V |
