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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGH40T120SMDL4
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275
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Fairchild Semiconductor IGBT Transistors FS2 TIGBT excellent swtching performance Through Hole TO-247-4 + 175 C Tube 555 W Single 1.2 kV 1.8 V 80 A +/- 400 nA +/- 25 V
FGH75T65SHDTL4
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131
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Fairchild Semiconductor IGBT Transistors FS3 TIGBT Excellent switching performan Through Hole TO-247-4 + 175 C Tube 455 W Single 650 V 1.6 V 150 A 400 nA +/- 20 V
NGTB40N120FL2WAG
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122
In-stock
onsemi IGBT Transistors 1200V/40 FAST IGBT FSII T Through Hole TO-247-4 - 55 C Tube 268 W Single 1200 V   160 A 200 nA 30 V
NGTB50N120FL2WAG
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30
In-stock
onsemi IGBT Transistors 1200V/50 FAST IGBT FSII T Through Hole TO-247-4 + 175 C Tube 268 W   1200 V 2.8 V 200 A 200 nA 20 V
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Infineon Technologies IGBT Transistors IGBT PRODUCTS   TO-247-4   Tube              
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Infineon Technologies IGBT Transistors IGBT PRODUCTS   TO-247-4   Tube              
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Infineon Technologies IGBT Transistors IGBT PRODUCTS   TO-247-4   Tube              
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Infineon Technologies IGBT Transistors IGBT PRODUCTS   TO-247-4   Tube              
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