- Manufacture :
- Collector- Emitter Voltage VCEO Max :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Maximum Gate Emitter Voltage | |
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42
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-274AA-3 | Tube | 350 W | Single | 600 V | 2 V | 85 A | +/- 20 V | |||||
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79
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-274AA-3 | Tube | 595 W | Single | 1.2 kV | 3.5 V | 80 A | +/- 20 V | |||||
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94
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-25kHz | Through Hole | TO-274AA-3 | Tube | 350 W | Single | 600 V | 2.3 V | 85 A | +/- 20 V | |||||
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100
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 8-25kHz Single IGBT | Through Hole | TO-274AA-3 | Tube | 595 W | Single | 1.2 kV | 3.5 V | 80 A | +/- 20 V | |||||
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VIEW | Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT | Through Hole | TO-274AA-3 | + 150 C | Tube | 350 W | Single | 600 V | 2 V | 85 A | +/- 20 V | ||||
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1,346
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-274AA-3 | Tube | 350 W | Single | 1.2 kV | 3.9 V | 78 A | +/- 20 V | |||||
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5,000
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 8-40kHz | Through Hole | TO-274AA-3 | Tube | 350 W | Single | 1.2 kV | 2.7 V | 99 A | +/- 20 V |