- Gate-Emitter Leakage Current :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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85
In-stock
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IR / Infineon | IGBT Transistors 1200V 108A | Through Hole | TO-247-3 | + 175 C | Tube | 469 W | Single | 1.2 kV | 1.7 V | 130 A | 200 nA | +/- 30 V | |||
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100
In-stock
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IR / Infineon | IGBT Transistors IGBT DISCRETES | Through Hole | TO-247-3 | + 175 C | Tube | 469 W | Single | 1.2 kV | 2.1 V | 130 A | +/- 200 nA | +/- 30 V |
