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Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGP4066DPBF
Per Unit
$6.000
RFQ
4,060
In-stock
IR / Infineon IGBT Transistors 600V UltraFast Trench IGBT Through Hole TO-247-3 Tube 454 W Single 600 V 2.1 V 140 A   +/- 20 V
IRGP4066PBF
1+
$7.630
10+
$6.900
25+
$6.580
100+
$5.710
RFQ
178
In-stock
Infineon Technologies IGBT Transistors 600V Low VCEon Trench IGBT Through Hole TO-247-3 Tube 454 W Single 600 V 2.1 V 140 A   +/- 20 V
AUIRGP4066D1
1+
$11.750
10+
$10.810
25+
$10.360
50+
$9.800
RFQ
35
In-stock
IR / Infineon IGBT Transistors 600V co-pack Auto Trench IGBT Through Hole TO-247-3 Tube 454 W   600 V 2.1 V 140 A 100 nA 20 V
AUIRGP4066D1-E
1+
$11.750
10+
$10.810
25+
$10.360
50+
$9.800
RFQ
70
In-stock
IR / Infineon IGBT Transistors 600V co-pack Auto Trench IGBT Through Hole TO-247-3 Tube 454 W   600 V 2.1 V 140 A 100 nA 20 V
GP4066D-E
1+
$10.000
10+
$9.000
25+
$8.000
50+
$8.000
RFQ
1,740
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast Trench IGBT Through Hole TO-247AD-3 Tube 454 W Single 600 V 2.1 V 140 A   +/- 20 V
IRGP4066-EPBF
1+
$7.860
10+
$7.100
25+
$6.770
100+
$5.880
RFQ
104
In-stock
IR / Infineon IGBT Transistors 600V Low VCEon Trench IGBT Through Hole TO-247AD-3 Tube 454 W Single 600 V 2.1 V 140 A   +/- 20 V
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