- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,060
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast Trench IGBT | Through Hole | TO-247-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V | |||||
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178
In-stock
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Infineon Technologies | IGBT Transistors 600V Low VCEon Trench IGBT | Through Hole | TO-247-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V | |||||
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179
In-stock
|
onsemi | IGBT Transistors IGBT 1200V 40A FS3 LOW | Through Hole | TO247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 1.55 V | 160 A | 200 nA | +/- 20 V | |||
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194
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 SOLAR/ | Through Hole | TO247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 1.7 V | 160 A | 200 nA | +/- 20 V | |||
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260
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 LOW VF | Through Hole | TO-247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 2.3 V | 160 A | 200 nA | +/- 20 V | |||
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1,740
In-stock
|
Infineon Technologies | IGBT Transistors 600V UltraFast Trench IGBT | Through Hole | TO-247AD-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V | |||||
|
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104
In-stock
|
IR / Infineon | IGBT Transistors 600V Low VCEon Trench IGBT | Through Hole | TO-247AD-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V |
