- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
8,500
In-stock
|
Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 483 W | Single | 1200 V | 2.7 V | 80 A | 600 nA | 20 V | ||||
|
21
In-stock
|
Infineon Technologies | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AC-3 | + 175 C | Tube | 483 W | Single | 600 V | 1.65 V | 140 A | 200 nA | 20 V | ||||
|
475
In-stock
|
Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 483 W | Single | 1200 V | 2.05 V | 80 A | 600 nA | +/- 20 V |