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Package / Case :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB20N135IHRWG
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RFQ
333
In-stock
onsemi IGBT Transistors 1350V/20A IGBT FSII TO-24 Through Hole TO-247 + 175 C Tube 394 W Single 1350 V 2.2 V 40 A 100 nA 25 V
NGTB40N135IHRWG
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RFQ
90
In-stock
onsemi IGBT Transistors 1350V/40A IGBT FSII TO-24 Through Hole TO-247 + 175 C Tube 394 W Single 1350 V 2.4 V 80 A 100 nA 25 V
NGTB30N135IHR1WG
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RFQ
105
In-stock
onsemi IGBT Transistors 1350V/30A IGBT FSII Through Hole TO-247-3 + 175 C Tube 394 W Single 1.35 kV 2.6 V 60 A 100 nA +/- 25 V
NGTB30N135IHRWG
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RFQ
162
In-stock
onsemi IGBT Transistors 1350V/30A IGBT FSII TO-24 Through Hole TO-247 + 175 C Tube 394 W Single 1350 V 2.3 V 60 A 100 nA 25 V
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