Build a global manufacturer and supplier trusted trading platform.
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IGW15T120
GET PRICE
RFQ
4,110
In-stock
Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 1200V 15A Through Hole TO-247-3 + 150 C Tube 110 W Single 1200 V 2.2 V 30 A 100 nA +/- 20 V
IKP10N60T
GET PRICE
RFQ
744
In-stock
Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 10A Through Hole TO-220-3 + 175 C Tube 110 W Single 600 V 1.8 V 24 A 100 nA 20 V
IGP10N60T
GET PRICE
RFQ
219
In-stock
Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 600V 10A Through Hole TO-220-3 + 175 C Tube 110 W Single 600 V 1.8 V 24 A 100 nA 20 V
Default Photo
GET PRICE
RFQ
500
In-stock
Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 10A Through Hole TO-220-3 + 175 C Tube 110 W Single 600 V 1.8 V 24 A 100 nA 20 V
Default Photo
GET PRICE
RFQ
500
In-stock
Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 600V 10A Through Hole TO-220-3 + 175 C Tube 110 W Single 600 V 1.8 V 24 A 100 nA 20 V
IXGT10N170
GET PRICE
RFQ
45
In-stock
IXYS IGBT Transistors 20 Amps 1700 V 4 V Rds SMD/SMT TO-268-3 + 150 C Tube 110 W Single 1.7 kV 2.7 V 20 A 100 nA +/- 20 V
Page 1 / 1