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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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4,110
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 1200V 15A | Through Hole | TO-247-3 | + 150 C | Tube | 110 W | Single | 1200 V | 2.2 V | 30 A | 100 nA | +/- 20 V | |||
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744
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 10A | Through Hole | TO-220-3 | + 175 C | Tube | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V | |||
|
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219
In-stock
|
Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 10A | Through Hole | TO-220-3 | + 175 C | Tube | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V | |||
|
GET PRICE |
500
In-stock
|
Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 10A | Through Hole | TO-220-3 | + 175 C | Tube | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V | |||
|
GET PRICE |
500
In-stock
|
Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 10A | Through Hole | TO-220-3 | + 175 C | Tube | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V | |||
|
GET PRICE |
45
In-stock
|
IXYS | IGBT Transistors 20 Amps 1700 V 4 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 110 W | Single | 1.7 kV | 2.7 V | 20 A | 100 nA | +/- 20 V |