- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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10,425
In-stock
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STMicroelectronics | IGBT Transistors Ultra Fast IGBT 35A 600V | Through Hole | TO-247 | + 150 C | Tube | 200 W | 2.5 V | 60 A | 100 nA | 20 V | ||||||
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475
In-stock
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STMicroelectronics | IGBT Transistors 35 A 600 V Ultra fast IGBT | Through Hole | TO-247 | + 150 C | Tube | 200 W | Single | 600 V | 2.5 V | 60 A | 0.1 uA | +/- 20 V |